High-power Impulse Magnetron Sputtering

High-power impulse magnetron sputtering (HIPIMS los yog HiPIMS, tseem hu ua high-power pulsed magnetron sputtering, HPPMS) yog ib txoj kev rau lub cev vapor deposition ntawm nyias films uas yog raws li magnetron ntsev dej deposition. HIPIMS siv cov kev kub siab tshaj plaws ntawm kev txiav txim ntawm kW ∙ cm ^-2 hauv pulses luv luv (impulses) ntawm kaum ntawm microseconds ntawm qis voj voog (rau / tawm piv piv) ntawm <> Cov cwj pwm txawv ntawm HIPIMS yog ib qib siab ionization ntawm cov hlau tawg thiab muaj feem ntau ntawm cov roj molecular gas dissociation uas ua rau muaj kev siab ceev ntawm cov yeeb yaj duab. Txoj kev ionization thiab dissociation degree nce mus raws li lub zog ncov cathode. Cov kev txwv no yog txiav txim los ntawm qhov kev hloov ntawm qhov paug tawm los ntawm kev qaum rau arc theem. Lub zog ncov thiab lub voj voog vov yog xaiv kom tswj tau qhov nruab nrab cathode zog zoo ib yam li cov pa luam yeeb (1-10 W ∙ cm ^-2 ).

HIPIMS yog siv rau:

●   adhesion mus pab tau ua ntej ntawm txheej txheem lub substrate ua ntej txheej deposition (substrate etching)

●   kev tso dej ntawm nyias zaj duab xis nrog kev siab ceev microstructure

HIPIMS plasma paug tawm

HIPIMS plasma yog tsim tawm los ntawm ib lub ci ntsa uas qhov paug tas ceev no tuaj yeem ncav ntau ntau A ∙ cm ^-2 , thaum lub qhov hluav taws xob paug tawm ntawm ntau pua volts. Kev tawm yog homogeneously faib thoob plaws hauv lub cathode (lub hom phiaj) tab sis saum toj no ib qho chaw pib ntawm qhov kev sib tw tam sim no nws yuav concentrated hauv nqaim ionization aav uas txav raws li txoj kev hu ua lub phiaj yaig "racetrack".

HIPIMS ua rau siab ntom ntshav siab ntawm qhov kev txiav txim ntawm 1013 ions ∙ cm ^-3 uas muaj cov zauv feem ntawm phiaj hlau ions. Lub tswv yim tseem ceeb yog kev hloov hluav taws xob, uas yog qhov sib npaug los ntawm kev sib pauv, diffusion, thiab ntshav tawm hauv cov hluav taws. Cov nqi qis tshaj nyob ntawm seb lub plasma ntom ntom.

Txoj haujlwm ionisation ntawm cov hlau vapor yog lub zog muaj zog ntawm lub ncov tam sim ntawm qhov kev tawm. Ntawm cov teeb meem tam sim no, cov tshuaj nplaum uas tau them 2+ thiab siab dua - mus txog 5+ rau V - tuaj yeem tsim tau. Cov tsos ntawm lub hom phiaj ions nrog lub xeev siab tshaj 1+ yog lub luag hauj lwm rau lub peev xwm secondary electron emission txheej txheem uas muaj siab dua emission coefficient tshaj qhov kev xa xov qia hlwb theem siab tshaj tawm pom nyob hauv cov pa roj carbon dioxide. Lub tsev lag luam ntawm ib qho kev siv hluav taws xob ntshiab thib ob yuav txhim khu lub sijhawm tam sim no.

HIPIMS feem ntau ua haujlwm nyob hauv luv mem tes (impulse) hom nrog lub voj voog uas tsis tshua muaj kev tiv thaiv kom tsis txhob overheating ntawm lub phiaj thiab lwm yam khoom. Nyob rau hauv txhua lub pulse tus tawm mus ntawm ob peb theem:

●   hluav taws xob tawg

●   roj ntshav

●   hlau ntshav

●   khov kho lub xeev, uas yuav tau mus cuag yog hais tias cov hlau plasma txaus ntom nti kom muaj peev xwm tswj tau ntau dua cov roj ntshav.

Qhov tsis muaj qhov hloov voltage (bias voltage) siv rau cov txheej txheem substrate cuam tshuam lub zog thiab kev coj ua ntawm txoj haujlwm ntawm cov khoom zoo uas tau ntaus cov txheej txheem. Lub voj voog tsev so tau ncua sij hawm nyob rau hauv kev txiav txim ntawm milliseconds. Vim tias cov voj voog ua haujlwm me me (<10%), tsuas="" yog="" qhov="" nruab="" nrab="" cov="" cathode="" zog="" xwb="" (1-10=""> Lub hom phiaj yuav txias thaum lub sij hawm "tawm sijhawm", uas tswj kev ruaj ntseg.

Qhov tso tawm uas tswj HIPIMS yog qhov siab tshaj tawm ntawm qhov siab, uas yog kev khiav haujlwm los yog quasistatory. Txhua tus mem tes tseem tshuav ib qho glow mus txog ib qho tseem ceeb ntev tom qab uas nws nkag mus rau ib qho kev tawm paug. Yog hais tias muaj plab ntev cia rau hauv qab qhov tseemceeb, cov paug tawm haujlwm hauv lub neej tsis ruaj khov.

Kev tshawb pom thawj zaug los ntawm lub koob yees duab ceev ceev hauv 2008 tau sau nws tus kheej, qhia tau tias zoo dua qhov kev txiav txim siab, thiab lees paub tias muaj ntau txoj kev ionization tshwm sim nyob rau hauv cov cheeb tsam tsawg heev ionization. Tus lej tshaj tawm yog tau los ntawm qhov kev txiav txim ntawm 104 m / s, uas yog tsuas yog 10% ntawm electron drift tshaj tawm.

Substrate pretreatement los ntawm HIPIMS

Substrate pretreatment hauv plasma ib puag ncig tsim nyog yuav tsum tau ua ntej tso dej ntawm nyias zaj duab xis ntawm cov khoom siv xws li tshuab tsheb, cov hlau txiav cov cuab yeej thiab cov khoom fittings. Cov substrates yog raus hauv lub ntshav thiab ib qho biased mus rau ib qhov siab muaj zog ntawm ob peb pua volts. Qhov no ua rau lub zog siab ion bombardment uas sputters tawm txhua yam kab mob. Hauv cov rooj plaub thaum plasma muaj hlau ions, lawv tuaj yeem raug implanted rau hauv lub substrate mus rau ib qhov tob ntawm ob peb nm. HIPIMS yog siv los tsim ib cov ntshav nrog lub siab ntom ntom thiab muaj feem xyuam ntawm cov hlau ions. Thaum saib ntawm zaj duab xis-substrate interface hauv qhov cross-section, ib tug yuav saib tau lub cuab yeej huv. Epitaxy los yog atomic registry yog raug ntawm qhov siv lead ua ntawm ib cov yeeb yaj kiab nitrite thiab cov siv lead ua ntawm cov hlau substrate thaum HIPIMS siv rau kev ua ntej. HIPIMS tau muab siv rau qhov ua tiav ntawm steel substrates rau thawj zaug nyob rau lub Ob Hlis 2001 los ntawm AP Ehiasarian.

Lub plab zom zaws thaum lub sij hawm ua ntej yuav siv cov high voltages, uas yuav tsum tau siv hom phiaj txhim kho thiab kev siv tshuab hluav taws xob. Kev sib koom ua ke DC substrate biasing units muab qhov kev xaiv ntau tshaj plaws raws li lawv maximize substrate etch tus nqi, txo minstrate kev puas tsuaj, thiab muaj peev xwm ua hauj lwm hauv lub nruab nrog ntau cathodes. Ib qho kev xaiv yog kev siv ob lub hwj huam HIPIMS synchronized hauv tus tswv tsev qhev kev sib txuas: ib qho los mus tsim kev tawm thiab ib qho los tsim ib qho kev nyuaj ntawm lub plhaws.

Thin-film deposition los ntawm HIPIMS

Nyias cov yeeb yaj duab tso los ntawm HIPIMS tom paug qhov tam sim no> 0.5 A · cm ^-2 muaj ib txoj hlua khom sab nraud nrog tsis muaj voids. Lub deposition of copper films los ntawm HIPIMS raug tshaj tawm thawj zaug ntawm V. Kouznetsov rau daim ntawv thov ntawm sau 1 μm vias nrog nam piv ntawm 1: 1.2

Transition metal nitride (CrN) thin films tau tso los ntawm HIPIMS rau thawj zaug nyob rau lub Ob Hlis 2001 los ntawm AP Ehiasarian. Qhov kev tshawb fawb thawj zaug ntawm cov yeeb yaj duab tso los ntawm HIPIMS los ntawm TEMdemonstrated ib lub microstructure ntom, dawb ntawm cov teev tsis xws luag. Cov yeeb yaj kiab tau muaj kev kub ntxhov, kev txhim khu muaj zog thiab tsis tshua muaj kev sib dhos. Kev lag luam ntawm HIPIMS kho vajtse ua raws li ua cov cuab yeej siv tau yooj yim mus rau lub zej zog dav dav thiab ua kom muaj kev sib txawv hauv ntau qhov chaw.

Cov ntaub ntawv hauv qab no muaj, nrog rau lwm tus, tau muab tso rau hauv los ntawm HIPIMS:

●   Corrosion Resistant: CrN / NbN nanoscale multilayer

●   Oxidation Resistant: CrAlYN / CrN , nanoscale , multilayer,   Ti-Al-Si-N, Cr-Al-Si-N nanocomposite

●   Optical: Ag, TiO ₂ , ZnO, InSnO, ZrO ₂ , CuInGaSe

●   MAX theem: TiSiC

●   Microelectronics: Cu, Ti, TiN, Ta, TaN

●   Cov Coatings hard: carbon nitride CN _x

●   Hydrophobic: HFO ₂

Zoo

Lub ntsiab zoo ntawm HIPIMS coatings muaj xws li lub denser txheej morphology thiab ib qho kev sib ntxiv ntawm kev ua rau tus hluas Modulus piv rau conventional PVD coatings. Whereas comparable nano-structured (Ti, Al) N coatings muaj ib hardness 25 GPa thiab tus hluas modulus ntawm 460 GPa, lub hardness ntawm tus tshiab HIPIMS txheej yog siab tshaj 30 GPa nrog ib tug Young modulus ntawm 368 GPa. Qhov sib piv ntawm qhov nyuaj thiab Young tus modulus yog ib qho kev ntsuas ntawm lub zog toughness ntawm lub txheej. Qhov txaus ntshaw yog qhov muaj kev kub ntxhov nrog ib tus hluas Young Modulus, xws li tuaj yeem pom hauv HIPIMS coatings. Tsis ntev los no, cov kev siv ntawm HIPIMS coated rau biomedical applications tau raug tshaj tawm los ntawm Rtimi li al.